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Handbook Series on Semiconductor Parameters cover
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The Handbook Series on Semiconductor Parameters will consist of 5 volumes and will include data on the most popular semiconductor materials. These volumes aim to be a basic reference for scientists, engineers, students and technicians working in semiconductor materials and devices. The books have been kept compact but comprehensive and contain the values of frequently needed parameters selected and commented by leading experts on these materials. The first volume will include data on Si, Ge, diamond, GaAs, GaP, GaSb, InAs, InP, and InSb.

Contents:
  • Silicon (Si) (M E Levinshtein & S Rumyantsev)
  • Germanium (Ge) (L E Vorobyev)
  • Diamond (C) (G Sh Gildenblat & P E Schmidt)
  • Gallium Arsenide (GaAs) (M E Levinshtein & S Rumyantsev)
  • Gallium Phosphide (GaP) (Yu A Goldberg)
  • Gallium Antimonide (GaSb) (A Ya Vul')
  • Indium Arsenide (InAs) (M P Mikhailova)
  • Indium Phosphide (InP) (N M Shmidt)
Readership: Engineers, physicists and materials scientists.

Free Access
FRONT MATTER
  • Pages:i–xiii

https://doi.org/10.1142/9789812832078_fmatter

Preview Abstract

The following sections are included:

  • PREFACE
  • CONTENTS

No Access
SILICON (Si)
  • Pages:1–32

https://doi.org/10.1142/9789812832078_0001

Preview Abstract

The following sections are included:

  • Basic Parameters at 300 K
  • Band Structure and Carrier Concentration
    • Temperature Dependences
    • Dependence of the Energy Gap on Hydrostatic Pressure
    • Energy Gap Narrowing at High Doping Levels
    • Effective Masses
    • Donors and Acceptors
  • Electrical Properties
    • Mobility and Hall Effect
    • Transport Properties in High Electric Field
    • Impact Ionization
    • Recombination Parameters
  • Optical Properties
  • Thermal Properties
  • Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties
  • References

No Access
GERMANIUM (Ge)
  • Pages:33–57

https://doi.org/10.1142/9789812832078_0002

Preview Abstract

The following sections are included:

  • Basic Parameters at 300 K
  • Band Structure and Carrier Concentration
    • Temperature Dependences
    • Dependences on Hydrostatic Pressure
    • Energy Gap Narrowing at High Doping Levels
    • Effective Masses
    • Donors and Acceptors
  • Electrical Properties
    • Mobility and Hall Effect
    • Transport Properties in High Electric Field
    • Impact Ionization
    • Recombination Parameters
  • Optical Properties
  • Thermal Properties
  • Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties
  • References

No Access
DIAMOND (C)
  • Pages:58–76

https://doi.org/10.1142/9789812832078_0003

Preview Abstract

The following sections are included:

  • Basic Parameters at 300 K (Field [1992])
  • Band Structure and Carrier Concentration
    • Temperature Dependences
    • Effective Masses and Density of States
    • Donors and Acceptors
  • Electrical Properties
    • Mobility and Hall Effect
    • Transport Properties in High Electric Field
    • Impact Ionization
  • Optical Properties
  • Thermal Properties
  • Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties (Field [1979]; Field [1992])
  • References

No Access
GALLIUM ARSENIDE (GaAs)
  • Pages:77–103

https://doi.org/10.1142/9789812832078_0004

Preview Abstract

The following sections are included:

  • Basic Parameters at 300 K
  • Band Structure and Carrier Concentration
    • Temperature Dependences
    • Dependences on Hydrostatic Pressure
    • Energy Gap Narrowing at High Doping Levels
    • Effective Masses
    • Donors and Acceptors
  • Electrical Properties
    • Mobility and Hall Effect
    • Transport Properties in High Electric Field
    • Impact Ionization
    • Recombination Parameters
  • Optical Properties
  • Thermal Properties
  • Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties
  • References

No Access
GALLIUM PHOSPHIDE (Gap)
  • Pages:104–124

https://doi.org/10.1142/9789812832078_0005

Preview Abstract

The following sections are included:

  • Basic Parameters at 300 K
  • Band Structure and Carrier Concentration
    • Temperature Dependences
    • Dependences on Hydrostatic Pressure (Ves et al. [1985])
    • Energy Gap Narrowing at High Doping Levels
    • Effective Masses
    • Donors and Acceptors
  • Electrical Properties
    • Mobility and Hall Effect
    • Transport Properties in High Electric Field
    • Impact Ionization
    • Recombination Parameters
  • Optical Properties
  • Thermal Properties
  • Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties
  • References

No Access
GALLIUM ANTIMONIDE (GaSb)
  • Pages:125–146

https://doi.org/10.1142/9789812832078_0006

Preview Abstract

The following sections are included:

  • Basic Parameters at 300 K
  • Band Structure and Carrier Concentration
    • Temperature Dependences
    • Dependences on Hydrostatic Pressure
    • Energy Gap Narrowing at High Doping Levels
    • Effective Masses
    • Donors and Acceptors
  • Electrical Properties
    • Mobility and Hall Effect
    • Transport Properties in High Electric Field
    • Impact Ionization
    • Recombination Parameters
  • Optical Properties
  • Thermal Properties
  • Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties
  • References

No Access
INDIUM ARSENIDE (InAs)
  • Pages:147–168

https://doi.org/10.1142/9789812832078_0007

Preview Abstract

The following sections are included:

  • Basic Parameters at 300 K
  • Band Structure and Carrier Concentration
    • Temperature Dependences
    • Dependence on Hydrostatic Pressure
    • Energy Gap Narrowing at High Doping Levels
    • Effective Masses
    • Donors and Acceptors
  • Electrical Properties
    • Mobility and Hall Effect
    • Transport Properties in High Electric Field
    • Impact Ionization
    • Recombination Parameters
  • Optical Properties
  • Thermal Properties
  • Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties
  • References

No Access
INDIUM PHOSPHIDE (InP)
  • Pages:169–190

https://doi.org/10.1142/9789812832078_0008

Preview Abstract

The following sections are included:

  • Basic Parameters at 300 K
  • Band Structure and Carrier Concentration
    • Temperature Dependences
    • Dependence on Hydrostatic Pressure
    • Energy Gap Narrowing at High Doping Levels
    • Effective Masses
    • Donors and Acceptors
  • Electrical Properties
    • Mobility and Hall Effect
    • Transport Properties in High Electric Field
    • Impact Ionization
    • Recombination Parameters
  • Optical Properties
  • Thermal Properties
  • Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties
  • References

No Access
INDIUM ANTIMONIDE (InSb)
  • Pages:191–213

https://doi.org/10.1142/9789812832078_0009

Preview Abstract

The following sections are included:

  • Basic Parameters
    • Basic Parameters at 300 K
    • Basic Parameters at 77 K
  • Band Structure and Carrier Concentration
    • Temperature Dependences
    • Dependences on Hydrostatic Pressure
    • Effective Masses
    • Donors and Acceptors
  • Electrical Properties
    • Mobility and Hall Effect
    • Transport Properties in High Electric Field
    • Impact Ionization
    • Recombination Parameters
  • Optical Properties
  • Thermal Properties
  • Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties
  • References

Free Access
BACK MATTER
  • Pages:214–218

https://doi.org/10.1142/9789812832078_bmatter

Preview Abstract

The following sections are included:

  • APPENDICES