Special Issue on Spin Dynamics in Magnetic Materials, Part 1; Guest Editor: Mourad Chérif (Université Paris 13, France)No Access

Resonant and Switching Fields for a Weakly Coupled Magnetic Tunnel Junction System

A. Layadi

A. Layadi

LESIMS, Departement de Physique, Université Ferhat Abbas, Sétif 19000, Algeria

E-mail Address: [email protected]

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https://doi.org/10.1142/S2010324716400117Cited by:3

Abstract

The ferromagnetic resonance (FMR) and the magnetization switching fields have been analytically determined for weakly coupled Magnetic Tunnel Junction or spin valve systems. Such systems consist of an antiferromagnetic (AF) and two ferromagnetic (F) thin films separated by a nonmagnetic one. Both bilinear $J_{1}$ and biquadratic $J_{2}$ coupling parameters are used to describe the interlayer exchange coupling, while the exchange anisotropy field $H_{E}$ characterizes the interfacial ( $F$ /AF) interaction. It will be shown how $J_{1}$ , $J_{2}$ , $H_{E}$ and the in-plane anisotropy fields can be derived for the experimental measure of the FMR field and the different magnetization switching fields.

Keywords:

References

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Vol. 06, No. 04

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History

Received 2 November 2016

Accepted 11 January 2017

Published: 22 February 2017

Keywords

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Resonant and Switching Fields for a Weakly Coupled Magnetic Tunnel Junction System

Abstract

References

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