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GRAPHYNE-BASED SINGLE ELECTRON TRANSISTOR: AB INITIO ANALYSIS

Center of Nanotechnology, Indian Institute of Technology Roorkee, Roorkee 247667, India

MEMS & Microsensors Group, Solid State Devices Division, CSIR-Central Electronics Engineering Research Institute, Pilani 333031, India

Corresponding author.

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RAJIB CHOWDHURY

Department of Civil Engineering, and Center of Nanotechnology, Indian Institute of Technology Roorkee, Roorkee 247667, India

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, and

R. JAYAGANTHAN

Department of Metallurgical and Materials Engineering, and Center of Nanotechnology, Indian Institute of Technology Roorkee, Roorkee 247667, India

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https://doi.org/10.1142/S1793292014500325Cited by:19 (Source: Crossref)

Abstract

The application of graphyne for a single-electron transistor (SET) that is operating in the Coulomb blockade regime is investigated in the first principles framework. Density functional theory modeling for graphyne has been used and the device environment has been described by a continuum model. The interaction between graphyne and the SET environment is treated with self-consistent Poisson equations. The charging energy as a function of gate voltage thus calculated has been used to obtain the charge stability diagram for the present system. The effect of electrode separation and the position of the molecule with respect to the dielectric on the gate coupling have been studied further. As compared with the previously studied systems on this line, graphyne has been observed to provide the gate coupling that is nearly close to that of benzene and graphene, but significantly greater than fullerene-based systems.

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