DETERMINE THE SIZE AND OXIDIZATION OF SILICON QUANTUM DOTS PREPARED BY THERMAL EVAPORATION METHOD
Abstract
Raman spectrum has been used to analyze the size of Silicon (Si) quantum dots (QDs) prepared by thermal evaporation. Si QDs were grown in thermal evaporation chamber with Ar gas presented. We determined the average size of the Si QDs by analyzing the optical phonon of Si QDs in Raman spectra. We found that the higher the Ar gas pressure in the chamber, the larger the average size of Si QDs grown by thermal evaporation. We found the Si dot size reaches a maximum, about 7.5 nm in diameter, when Ar gas pressure is about 2–3 torr. The oxidization of Si QDs is also observed by Raman spectra. The life time of oxidized process was about 46 days.
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