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Floating Memristor and Inverse Memristor Emulators with Electronic Tuning

Department of Electronics and Communication Engineering, National Institute of Technology Jamshedpur, Jamshedpur, Jharkhand, India

E-mail Address: [email protected]

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Mayank Srivastava

https://orcid.org/0000-0003-0963-2605

Department of Electronics and Communication Engineering, National Institute of Technology Jamshedpur, Jamshedpur, Jharkhand, India

E-mail Address: [email protected]

Corresponding author.

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https://doi.org/10.1142/S0218126621502248Cited by:4 (Source: Crossref)

Abstract

The work reports two different configurations to emulate the floating memristor and inverse memristor behavior. The presented circuits are based on a modified concept of active element VDTA (Voltage Differencing Transconductance Amplifier) termed as MVDTA. The reported floating memristor employs only a single MVDTA and single grounded capacitance. On the other end, the floating emulation circuit of inverse memristor emulator is based on two MVDTAs and single grounded capacitance. The behavior of the realized element for both the configurations can be tuned electronically through biasing voltage. Also, there is no employment of any commercial IC or external circuitry for multiplication of analogue voltages which is generally required to implement memristive elements. Along with the circuit implementations, mathematical properties of ideal memristor and inverse memristor considering both symmetric as well as nonsymmetric models are discussed. All the emulation circuits are verified by executing simulations using CMOS 0.18um process technique under PSPICE environment. The reported circuits are also realized using commercially available IC LM13700 and results are presented.

This paper was recommended by Regional Editor Emre Salman.

Keywords:

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