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SPICE Behavioral Modeling of TiO₂ Memristors for Digital Logic Applications

Nadine Gergel-Hackett

https://orcid.org/0000-0003-1917-3713

Department of Chemistry and Physics, Mary Baldwin University, Staunton, VA 24401, USA

E-mail Address: [email protected]

Corresponding author.

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Anna Wright

Department of Chemistry and Physics, Mary Baldwin University, Staunton, VA 24401, USA

Present address: Northwood High School, 919 University Blvd., West, Silver Spring, MD 20901 USA.

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Farrah-Amoy Fullerton

Department of Chemistry and Physics, Mary Baldwin University, Staunton, VA 24401, USA

Present address: The University of Alabama at Birmingham, 1720 2nd Avenue South, Birmingham, AL 35294, USA.

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, and

Aaleyah Joe

Department of Chemistry and Physics, Mary Baldwin University, Staunton, VA 24401, USA

Present address: Georgetown University, 37th and O Streets, N.W., Washington, DC 20057, USA.

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https://doi.org/10.1142/S0218126621200024Cited by:2 (Source: Crossref)

Abstract

This work presents a behavior-based memristor model for the simulation of novel digital logic architectures. This model exhibits the nonvolatile hard switching current–voltage curves of the experimentally realized memristors. Because the model is implemented via the widely available traditional SPICE (Simulation Program with Integrated Circuit Emphasis) circuit components, its accuracy is not dependent on still-emerging device transport theory and auxiliary variables. The memristor model is used in material implication (IMPLY) gates to perform both combinational and sequential logics. As IMPLY gates exhibit the complete functionality required for digital logic, this work presents a simple realistic memristor model for use in the simulation of novel digital logic architectures.

This paper was recommended by Regional Editor Emre Salman.

Keywords:

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