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BALLISTIC ELECTRON ACCELERATION NEGATIVE-DIFFERENTIAL-CONDUCTIVITY DEVICES

    https://doi.org/10.1142/S012915640600376XCited by:0 (Source: Crossref)

    A short drift distance N-I-N device, with high electric field, allows ballistic electron accelerations and drift. Conditions can be enhanced by using a heterojunction to launch electrons at finite energy. Initial I(V) results without the heterojunctions are presented, as well as the design of a structure which has the heterostructure, projected results are speculated upon, along with an on-chip circuit being used.

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