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II. CMOS Technology: Nanoscale Physics, New Materials and StructuresNo Access

Device Simulation Demands of Upcoming Microelectronics Devices

    https://doi.org/10.1142/S0129156406003576Cited by:2 (Source: Crossref)

    An overview of models for the simulation of current transport in micro- and nanoelectronic devices within the framework of TCAD applications is presented. Starting from macroscopic transport models, currently discussed enhancements are specifically addressed. This comprises the inclusion of higher-order moments into the transport models, the incorporation of quantum correction and tunneling models up to dedicated quantum-mechanical simulators, and mixed approaches which are able to account for both, quantum interference and scattering. Specific TCAD requirements are discussed from an engineer's perspective and an outlook on future research directions is given.

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