Thermal annealing induced multiple phase in V/V2O5 alternating multilayer structure
*King Saud University, Department of Physics and Astronomy, College of Science, Riyadh, Saudi Arabia
†Department of Electrical Engineering, College of Engineering, King Saud University, Riyadh, Saudi Arabia
‡Université de Monastir, Laboratoire de Micro-optoélectronique et Nanostructures, Faculté des Sciences Avenue de l’environnement, 5019, Monastir, Tunisia
§Prince Sultan Advanced Technologies Research Institute (PSATRI), King Saud University, Riyadh, Saudi Arabia
¶National Center for Applied Physics, King Abdulaziz City for Science and Technology (KACST), Riyadh, Saudi Arabia
In this paper, we report on microstructural, optical and electrical properties of alternating multilayer of vanadium pentoxide (V2O5), 25 nm, and vanadium (V), 5 nm, thin films deposited at room temperature by radio frequency (RF) and DC magnetron sputtering, respectively. Raman and photoluminescence (PL) spectroscopy have been employed to investigate the effects of thermal annealing for 20, 30 and 40 min at 400C in Nitrogen (N2) atmosphere on the multiple phase formation and its impact on the film resistance and temperature coefficient of resistance (TCR). We demonstrate that the oxygen free annealing environment allows the formation of multiple phases including V2O5, V6O and VO2 through oxygen diffusion and consequent deficiency in V2O5 layer.